? semiconductor components industries, llc, 2010 january, 2010 ? rev. 8 1 publication order number: mbrb30h60ct ? 1/d mbrb30h60ct-1g, mbr30h60ctg, mbrf30h60ctg, mbrb30h60ctt4g switchmode ? power rectifier 60 v, 30 a features and benefits ? low forward voltage ? low power loss/high efficiency ? high surge capacity ? 175 c operating junction temperature ? 30 a total (15 a per diode leg) ? guard ? ring for stress protection ? these are pb ? free devices applications ? power supply ? output rectification ? power management ? instrumentation mechanical characteristics: ? case: epoxy, molded ? epoxy meets ul 94 v ? 0 @ 0.125 in ? weight (approximately): 1.5 grams (i 2 pak) weight (approximately): 1.7 grams (d 2 pak) weight (approximately): 1.9 grams (to ? 220 and to ? 220fp) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c max. for 10 seconds maximum ratings please see the table on the following page schottky barrier rectifiers 30 amperes, 60 volts 1 3 2, 4 http://onsemi.com i 2 pak (to ? 262) case 418d plastic style 3 3 4 1 2 to ? 220 case 221a plastic style 6 3 1 2 4 to ? 220 case 221d style 3 d 2 pak case 418b see detailed ordering and shipping information in the package dimensions section on p age 6 of this data sheet. ordering and marking information
mbrb30h60ct ? 1g, mbr30h60ctg, mbrf30h60ctg, mbrb30h60ctt4g http://onsemi.com 2 maximum ratings (per diode leg) rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 60 v average rectified forward current (rated v r ) t c = 159 c i f(av) 15 a peak repetitive forward current (rated v r , square wave, 20 khz) i frm 30 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 260 a operating junction temperature (note 1) t j ? 55 to +175 c storage temperature t stg 55 to +175 c voltage rate of change (rated v r ) dv/dt 10,000 v/ s controlled avalanche energy (see test conditions in figures 11 and 12) w aval 350 mj esd ratings: machine model = c human body model = 3b > 400 > 8000 v thermal characteristics maximum thermal resistance (mbrb30h60ct ? 1g and mbr30h60ctg) ? junction ? to ? case ? junction ? to ? ambient (mbrf30h60ctg) ? junction ? to ? case (mbrb30h60cttrg) ? junction ? to ? case r jc r ja r jc r jc 2.0 70 4.4 1.6 c/w electrical characteristics (per diode leg) maximum instantaneous forward voltage (note 2) (i f = 15 a, t c = 25 c) (i f = 15 a, t c = 125 c) (i f = 30 a, t c = 25 c) (i f = 30 a, t c = 125 c) v f 0.62 0.56 0.78 0.71 v maximum instantaneous reverse current (note 2) (rated dc voltage, t c = 25 c) (rated dc voltage, t c = 125 c) i r 0.3 45 ma stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. the heat generated must be less than the thermal conductivity from junction ? to ? ambient: dp d /dt j < 1/r ja . 2. pulse test: pulse width = 300 s, duty cycle 2.0%.
mbrb30h60ct ? 1g, mbr30h60ctg, mbrf30h60ctg, mbrb30h60ctt4g http://onsemi.com 3 i f , instantaneous forward current (a) figure 1. typical forward voltage figure 2. maximum forward voltage v f , instantaneous forward voltage (v) 100 1 0.1 0.4 0 0.2 1.0 t j = 25 c 0.8 0.6 i r , maximum reverse current (a) i r , reverse current (a) figure 3. typical reverse current figure 4. maximum reverse current 10 0 v r , reverse voltage (v) 1.0e ? 01 1.0e ? 02 1.0e ? 03 1.0e ? 06 20 t j = 125 c t j = 25 c i f , average forward current (a) figure 5. current derating for mbrb30h60ct ? 1g, mbr30h60ctg, and mbrb30h60ctt4g t c , case temperature ( c) 120 110 10 5 0 140 150 130 160 square wave dc p fo , average power dissipation (w) 15 0 i o , average forward current (amps) 16 2 0 510 square figure 6. forward power dissipation 10 1.2 10 t j = 125 c 30 40 60 1.0e ? 05 1.0e ? 04 10 0 v r , reverse voltage (v) 1.0e ? 01 1.0e ? 02 1.0e ? 03 1.0e ? 06 20 t j = 125 c t j = 25 c 30 40 60 1.0e ? 05 1.0e ? 04 170 180 100 i f , instantaneous forward current (a) v f , instantaneous forward voltage (v) 100 1 0.1 0.4 0 0.2 1.0 t j = 25 c 0.8 0.6 1.2 10 t j = 125 c 4 6 8 12 14 dc 30 15 25 20 20 50 50 25 20 18
mbrb30h60ct ? 1g, mbr30h60ctg, mbrf30h60ctg, mbrb30h60ctt4g http://onsemi.com 4 figure 7. capacitance c, capacitance (pf) 0 v r , reverse voltage (v) 1000 100 20 40 t j = 25 c figure 8. current derating for mbrf30h60ctg 60 10 30 10,000 50 0 5 10 15 20 25 30 100 110 120 130 140 150 160 170 180 t c , case temperature ( c) i f , average forward current (a) square wave dc r(t), transient thermal resistance figure 9. thermal response junction ? to ? case for mbrb30h60ct ? 1g, mbr30h60ctg and mbrb30h60ctt4g 1000 0.1 0.00001 t 1 , time (sec) 10 0.01 0.0001 0.001 0.01 1 10 100 0.000001 0.1 1 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 r(t), transient thermal resistance figure 10. thermal response junction ? to ? case for mbrf30h60ctg 1000 0.1 0.00001 t 1 , time (sec) 0.1 0.0001 0.001 0.01 1 10 100 0.000001 0.01 1 10 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d = 0.5 single pulse 0.2 0.1 0.05 0.01 0.001
mbrb30h60ct ? 1g, mbr30h60ctg, mbrf30h60ctg, mbrb30h60ctt4g http://onsemi.com 5 mercury switch v d i d dut 10 mh coil +v dd i l s 1 bv dut i l i d v dd t 0 t 1 t 2 t figure 11. test circuit figure 12. current ? voltage waveforms the unclamped inductive switching circuit shown in figure 11 was used to demonstrate the controlled avalanche capability of this device. a mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. when s 1 is closed at t 0 the current in the inductor i l ramps up linearly; and energy is stored in the coil. at t 1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt ef fects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at bv dut and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t 2 . by solving the loop equation at the point in time when s 1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the v dd power supply while the diode is in breakdown (from t 1 to t 2 ) minus any losses due to finite component resistances. assuming the component resistive elements are small equation (1) approximates the total energy transferred to the diode. it can be seen from this equation that if the v dd voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when s 1 was closed, equation (2). w aval 1 2 li 2 lpk bv dut bv dut v dd w aval 1 2 li 2 lpk equation (1): equation (2):
mbrb30h60ct ? 1g, mbr30h60ctg, mbrf30h60ctg, mbrb30h60ctt4g http://onsemi.com 6 i 2 pak (to ? 262) case 418d ayww b30h60g aka to ? 220 case 221a ayww b30h60g aka to ? 220 case 221d ayww b30h60g aka ayww b30h60g aka d 2 pak case 418b marking diagrams b30h60 = device code a = assembly location y = year ww = work week g = pb ? free package aka = polarity designator ordering information device package shipping ? mbrb30h60ct ? 1g to ? 262 (pb ? free) 50 units / rail mbr30h60ctg to ? 220 (pb ? free) 50 units / rail mbrf30h60ctg to ? 220fp (pb ? free) 50 units / rail mbrb30h60ctt4g d 2 pak (pb ? free) 800 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
mbrb30h60ct ? 1g, mbr30h60ctg, mbrf30h60ctg, mbrb30h60ctt4g http://onsemi.com 7 package dimensions i 2 pak (to ? 262) case 418d ? 01 issue d notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. style 3: pin 1. anode 2. cathode 3. anode 4. cathode ? t ? w g k a c e v j h 123 4 seating plane d 3 pl dim min max min max millimeters inches a 0.335 0.380 8.51 9.65 b 0.380 0.406 9.65 10.31 c 0.160 0.185 4.06 4.70 d 0.026 0.035 0.66 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.094 0.110 2.39 2.79 j 0.013 0.025 0.33 0.64 s 0.390 ref 9.90 ref v 0.045 0.070 1.14 1.78 w 0.522 0.551 13.25 14.00 ? b ? m b m 0.13 (0.005) t s f f 0.122 ref 3.10 ref k 0.500 0.562 12.70 14.27 to ? 220 case 221a ? 09 issue af notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. style 6: pin 1. anode 2. cathode 3. anode 4. cathode dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.161 3.61 4.09 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.014 0.025 0.36 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane ? t ? c s t u r j
mbrb30h60ct ? 1g, mbr30h60ctg, mbrf30h60ctg, mbrb30h60ctt4g http://onsemi.com 8 package dimensions style 1: pin 1. base 2. collector 3. emitter 4. collector style 2: pin 1. gate 2. drain 3. source 4. drain style 3: pin 1. anode 2. cathode 3. anode 4. cathode seating plane s g d ? t ? m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 ? b ? m b style 4: pin 1. gate 2. collector 3. emitter 4. collector w w notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 418b ? 01 thru 418b ? 03 obsolete, new standard 418b ? 04. f 0.310 0.350 7.87 8.89 l 0.052 0.072 1.32 1.83 m 0.280 0.320 7.11 8.13 n 0.197 ref 5.00 ref p 0.079 ref 2.00 ref r 0.039 ref 0.99 ref m l f m l f m l f variable configuration zone r n p u view w ? w view w ? w view w ? w 123 style 5: pin 1. cathode 2. anode 3. cathode 4. anode d 2 pak 3 case 418b ? 04 issue k *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 8.38 5.080 dimensions: millimeters pitch 2x 16.155 1.016 2x 10.49 3.504
mbrb30h60ct ? 1g, mbr30h60ctg, mbrf30h60ctg, mbrb30h60ctt4g http://onsemi.com 9 package dimensions to ? 220 fullpak case 221d ? 03 issue k dim a min max min max millimeters 0.617 0.635 15.67 16.12 inches b 0.392 0.419 9.96 10.63 c 0.177 0.193 4.50 4.90 d 0.024 0.039 0.60 1.00 f 0.116 0.129 2.95 3.28 g 0.100 bsc 2.54 bsc h 0.118 0.135 3.00 3.43 j 0.018 0.025 0.45 0.63 k 0.503 0.541 12.78 13.73 l 0.048 0.058 1.23 1.47 n 0.200 bsc 5.08 bsc q 0.122 0.138 3.10 3.50 r 0.099 0.117 2.51 2.96 s 0.092 0.113 2.34 2.87 u 0.239 0.271 6.06 6.88 seating plane ? t ? u c s j r notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch 3. 221d-01 thru 221d-02 obsolete, new standard 221d-03. ? b ? ? y ? g n d l k h a f q 3 pl 123 m b m 0.25 (0.010) y style 3: pin 1. anode 2. cathode 3. anode on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 mbrb30h60ct ? 1/d fullpak and switchmode are trademarks of semiconductor components industries, llc. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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